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1、1444IEEEJOURNALOFSOLID-STATECIRCUITS,VOL.27,NO.IO.OCTOBER1992A15-GHzMonolithicLow-Phase-NoiseVCOUsingAlGaAs/GaAsHBTTechnologyYoshikiYamauchi,HidekiKamitsuna,MasashiNakatsugawa,HiroshiIto,MasahiroMuraguchi,andKazuoOsafuneAbstract-Wehavedevelopeda15-GHzfullymonolithiclow-11.DEV
2、ICEDESIGNphase-noiseVCOMMICthathasbeenfabricatedwithoutex-ternaltuningelementusinganAlGaAs/GaAsHBTtechnology.AschematiccrosssectionoftheVCOMMICwithanAnHBTandavariablecapacitancediodeorvaractorarefab-HBTandavaractorisshowninFig.1.Thisstructure,ricatedinanMMICchipusingstandardH
3、BTICprocess.Awhichemploysaself-alignedsidewallseparatedbasetuningrangeofabout600MHzisobtainedwithvaryingcontrolelectrode(SSBE)technology[6],reducedthebase-col-voltagefrom0to4Vwithanoutputpowerofmorethan-4lectorjunctionsize,resultinginachievingasmalljunc-dBm.Thelowphasenoisele
4、velforanoffsetfrequencyof100kHzof-85dBc/Hzwasmeasuredatafrequencyof15.6GHz.tioncapacitancewithcorrespondingthehighfTandfmax.TheepitaxiallayerparametersdesignedfortheMMICI.INTRODUCTIONarelistedinTableI.Toachieveawidervariablerangeofcapacitanceandgoodcapacitancetuningsensitivit
5、y,aIGH-frequency-bandmonolithicVCO'sandmodu-Hlusprescalersarenecessarytominimizethephasedoublecollectorlayerofn/n-GaAswasusedfortheHBTandthevaractor.Thehighdopinglevelofthecol-noiseofphase-locked-loop(PLL)frequencysynthesizers,lectorlayerforthebase-collectorjunctionsideisrequ
6、iredwhichareintrinsictomodemmicrowavecommunicationsystemsinfrequenciesabove10GHz.forlargecapacitanceatalowtuningvoltage.Ontheotherhand,thereisalimitationonthedopinglevelwhenaThestableoscillationaswellashigh-frequencywide-bandperformanceisrequiredfortheVCO.Amonolithicbreakdown
7、voltageofover5VisrequiredforVCOcir-oscillatorandahybridVCOusingAlGaAs/GaAsHBT'scuitdesign.Therefore,thecollectorlayerofthebase-thatofferlow-phase-noiseperformancehavebeenre-collectorjunctionsidewashighlydopedto1XlOI7cmP3,andthecollectorlayerofthecollectorbuffersidewasported[1
8、1,[2].Superiorphase-noiseperformancehasbeenobtainedinmonolithicVCO's
