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1、ProspectsforthedevelopmentofopticalsystemsfornanolithographyaA.B.Bel’skiOAOS.A.ZverevKrasnogorskFactory,Krasnogorsk,MoscowOblastbM.A.GanNPKS.I.VavilovStateOpticalInstitute,St.PetersburgcI.A.MironovScienti?cResearchandTechnologicalInstituteofOpticalMaterialScience,S.I.Va
2、vilovStateOpticalInstituteAll-RussiaScienceCenter,St.PetersburgdR.P.SesyanA.F.IoffePhysicotechnicalInstitute,RussianAcademyofSciences,St.PetersburgSubmittedMay18,2009OpticheskiZhurnal76,5969August2009Thispaperdiscussestheprinciplesunderwhichhigh-resolutionprojectionp
3、hotolithographicob-jectivesarecreatedandtherequirementsontheopticalmaterialsusedforthem.Itisshownthat?uoriteisoneofthemostpromisingmaterialsforcreatingobjectivesforphotolithographyatwavelengths248and193nm.Adiscussionisgivenoftheprospectsfordevelopinglens-basedprojectionobj
4、ectiveswithhighnumericalaperture,themodernstateoftheproductiontechnol-ogy,andalsomethodsforcertifyingthemainopticalparametersofphotolithographic-quality?uorite.Fluoritecrystalsupto300mmindiameterand50mmthickhavebeenfabricatedandcerti?ed.Thecrystalsgrownusingthistechnologyh
5、avehightransmittance99.9299.96%at=193nm,goodopticalhomogeneityn=1410?6,andlowbirefringence=0.52.0nm/cm.Thecrystalshavevirtuallynoluminescence.Proposalsaregivenforthedevelopmentofphotolithographicoptics.?2009OpticalSocietyofAmerica.INTRODUCTIONunusualperfectioni
6、ntheperiodconsideredhere.Itconsistsofseveraltensofopticalelementsmorethan300mminThefundamentalphysicalbasisforthedevelopmentofdiameterand,inanopticallengthofmorethanonemeter,microelectronicsformorethanhalfacenturyofitsdevelop-providesvirtuallyaberration-freeformationofanim
7、ageinamentwasandremainsawaveprocessofimagetransfer.?eldabout30mmdiameterwithanumericalapertureNABeginninginthe1980s,thishasbeenprojectiontransferwithreductionofthescaleandwavelengthoftheradiationthatexceeds0.9.Itshouldbepointedoutthattheincreaseofbeingused.Thewavelength-
8、reductionprocessreachedthetheNAofprojectionobjectivesforlithographyhasbeenac-deepultravio