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1、IGBTGateDriverCalculationGateDriverRequirementWhatisthemostimportantrequirement foran IGBTdriver?GatePeakcurrentConditionsforasafetyoperationWhichgatedriverissuitableforthemoduleSKM200GB128D?Designparameters:fsw=10kHzRg=?reverserecoverycurrentDiodeshouldbe-1.5xIdiodeby80de
2、greecase130Ax1.5=195AGateresistorinrangeof“test–gateresistor”Howtofindtherightgateresistor?Rg=7OhmTwogateresistorsarepossibleforturnonandturnoffRon=7OhmRoff=10Ohm195A–maxreverserecoverycurrentDifferencebetweenTrench-andSPTTechnologyTrenchTechnologyneedsasmallerGatechargeDriv
3、erhastoprovideasmallerGatechargeSPTTechnologyneedsmoreGatechargecomparedtoTrenchTechnologyDriverhastoprovideahigherGatechargeDriverperformance–differentIGBTtechnologiesneedsdifferentgatechargeTrenchIGBTwithsamechipcurrentGatechargeis2.3uCDriverperformance–differentIGBTtechno
4、logiesneedsdifferentgatechargeSPTIGBTwithsamechipcurrentGatechargeis3uCDemandsforthegatedriverThesuitablegatedrivermustprovidetherequiredGatecharge(QG)–powersupplyofthedrivermustprovidetheaveragepowerAveragecurrent(IoutAV)–powersupplyGatepulsecurrent(Ig.pulse)–mostimportanta
5、ttheappliedswitchingfrequency(fsw)-8151390DeterminationofGateChargeGatecharge(QG)canbedeterminedfromfig.6oftheSEMITRANSdatasheet?QG=1390nCThetypicalturn-onandturn-offvoltageofthegatedriverisVGG+=+15VVGG-=-8VCalculationoftheaveragecurrentCalculationofaveragecurrent:IoutAV=P/?
6、U?V=+Vg+[-Vg]withP=E*fsw=QG*?V*fsw?IoutAV=QG*fsw=1390nC*10kHz=13.9mAAbsolutevaluePowersupplyrequirementsGatechargeThepowersupplyorthetransformermustprovidetheenergy(Semikronisusingpulsetransformerforthepowersupply,wemustconsiderthetransformedaveragepowerfromthetransformer)Av
7、eragecurrentIsrelatedtothetransformerCalculationofthepeakgatecurrentExaminationofthepeakgatecurrentwithminimumgateresistanceE.g.RG.on=RG.off=7?Ig.puls≈?V/RG+Rint=23V/7?+1?=2.9APulsepowerratingofthegateresistorPtotal–GateresistorPpulseGateresistor=IoutAVx?VMoreinformation:The
8、problemoccurswhentheuserforgetsaboutthepeakpowerratingofthegateresistor.The
