資源描述:
《畢業(yè)設(shè)計-英文文獻(xiàn)及翻譯-電氣電子信息類專業(yè)》由會員上傳分享,免費在線閱讀,更多相關(guān)內(nèi)容在學(xué)術(shù)論文-天天文庫。
1、畢業(yè)設(shè)計(外文翻譯材料)學(xué)院:專業(yè):學(xué)生姓名:指導(dǎo)教師:電氣與電子工程學(xué)院電子信息工程譚博學(xué)2008年4月外文翻譯(原文)MinimizationandidentificationofconductedemissionbearingcurrentinvariablespeedinductionmotordrivesusingPWMinverterAbstract.Therecentincreaseintheuseofspeedcontrolofacinductionmotorforvariablespeeddriveusingpulsewidthmodulation(P
2、WM)inverterisduetotheadventofmodernpowerelectronicdevicesandintroductionofmicroprocessors.Therearemanyadvantagesofusingacinductionmotorforspeedcontrolapplicationsinprocessandaerospaceindustries,butduetofastswitchingofthemodernpowerelectronicdevices,theparasiticcouplingproducesundesirable
3、effects.Theundesirableeffectsincluderadiatedandconductedelectromagneticinterference(EMI)whichadverselyaffectnearbycomputers,electronic/electricalinstrumentsandgiverisetotheflowofbearingcurrentintheinductionmotor.Duetotheflowofbearingcurrentintheinductionmotor,electricaldischargemachining
4、takesplaceintheinnerraceofthebearingwhichreducesthelifeofthebearing.Inhighpowerconvertersandinverters,theconductedandradiatedemissionsbecomeamajorconcern.Inthispaper,identificationofbearingcurrentduetoconductedemission,themeasurementofbearingcurrentinamodifiedinductionmotorandtominimizet
5、hebearingcurrentarediscussed.Thestandardcurrentprobe,thestandardlineimpedancestabilizationnetwork(LISN)),theelectronicsinterfacecircuitsareusedtomeasurehighfrequencycommonmodecurrent,bearingcurrentandtominimizetheconductednoisefromthesystem.TheLISNwillpreventtheEMInoiseenteringthesystemf
6、romthesupplysourcebyconductivemethods,atthesametimepreventstheEMIgeneratedifanyduetoPWM,fastswitchinginthesystem,willnotbeallowedtoenterthesupplyline.ForcomparingtheresultswithFederalCommunicationsCommission(FCC)andSpecialCommitteeonRadioInterference(CISPR)standards,thegraphsareplottedwi
7、thfrequencyVs,linevoltageindBμV,commonmodevoltageindBμVandthebearingcurrentindBμAwithoutandwithminimizingcircuits.31外文翻譯(原文)Keywords.EMI;a.c.drives;bearingcurrent.1.IntroductionWiththedevelopmentofpowerelectronicdevicesliketheinsulatedgatebi-polartransistor(IGBT),thepower