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1、???ъ????????GaN??????????????ガ???????ウ??????????????MOCVD?????????-Al2O3???к?????GaN???ク??????????????俆??????????????н??????GaN????????????????????????а????н???????????????X?????DCXRD?????PL???????Hall??????????TEM????????傼???TEM???????????????????????????DCXRD
2、????????????????????108cm-2?????????????к???????о??????GaN?????????????о?????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????????
3、??????ф?108cm-2????????????????????????????GaN???????????GaN??????????о???????????????????????PL?????????哴??о???????IYL/I0??儈???????????????????PL????????????IYL/I0???к???????а???н?????????????????????н?????????????????????????????????????????????GaN???????????
4、?????????????????????????MOCVD??ク????????????????????I???ъ????????THETHESTUDYSTUDYSTUDYOFOFOFTHETHETHEINFLUENCEINFLUENCEINFLUENCEOFOFOFTHETHETHEGaNGaNGaNTHINTHINFILMFILMDISLOCATIONSDISLOCATIONSDISLOCATIONSONONONTHETHETHECARRIERCARRIERPROPERTIESABSTRACTTheeffect
5、ofthreadingdislocationdensity(TDD)inGaNthinfilms,whichweregrownonthesapphire(?-Al2O3)substratebymetalorganicchemicalvapordeposition(MOCVD),wasstudiedinthispaper.Firstly,differentGaNthinfilmsweregrownwithdifferentparametersinordertoachievethedifferentTDDs,andsom
6、esamplewastreatedbytherapidtreatingprogress(RTP)tomakedifferentTDDsinthesamesample.Then,theTDDsandopticalandelectricalcharacterofGaNsamplesweremeasuredbydouble-crystalX-raydiffraction(DCXRD)?photoluminescence(PL)?Hallmeasurementandtransmissionelectronmicroscope
7、(TEM).TheTEMwasusedtoinvestigatetheTDdistributionanddeveloped.TheTDDswereinthemagnitudeof108cm-2calculatedbyDCXRD,andthenbasedontheseresultstherelationshipbetweentheTDDsandpropertiesofcarrierandphoto-electricityofGaN.ThroughtherelationshipcurvesbetweenTDDsandca
8、rrierconcentrationormobilityofGaNsamples,itwasnoticedthatthecarrierconcentrationincreasedwiththeTDDsincreasing,whilethemobilitywascontrary.Thereasonableexplanationwasachieve