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1、微電子工藝原理一、單項(xiàng)選擇1.Themostcommonreticlereductionratiousedwithstep-and-scanexposuretoolsis（）a.1:1and4:1b.1:1and5:1c.4:1and5:1d.4:12.Whichofthefollowingprocessesareperformedinthediffusionarea?Circleallthatapply.（）a.wafercleansb.hightemperatureprocessingc.me
2、tallizationd.polishinge.photoresiststripping3.Whatarethethreeproductionareaswherephotoresist-coatedwaferscanbefound?（）a.diffusionb.photolithographyc.etchd.implante.thinfilmsf.polish4.Whichofthefollowingisnotacommonproductiontoolinthethinfilmsarea?（）a.
3、plasmaresiststripperb.CVDsystemsC.PVDsystemsd.rapidthermalannealsysteme.sputteringsystemf.spin-on-glassdispensesystem5.WhatdoesthetermCMPstandfor?（）a.chemicallymodulatedphotostabilizerb.chemicalmechanicalpropellantc.chemicalymanipulatedplasmad.chemica
4、lmechanicalplanarization6.WhatisanothernameforCMP?（）a.etchb.implantc.polishd.diffusion7.ThetermWETstandsfor（）a.waferetchtechnologyb.wetetchfortitaniumcontanctsc.waferelastomerictreatmentd.waferelectricaltest8.Thedataobtainedfromwafertest/sortisusedto（
5、）a.determinewhichwafersneedtogothroughWET.b.determinewhichwafersneedtogothroughbackgrind.c.determinesthedieyieldforeachwafer.d.calculatecycletimeforwaferproduction.9.Thewaferistestedtwiceinordertodetermineitsproductworthiness（）a.onceafterfirstmetaletc
6、handafterthecompletionofthelastwaferprocessstep.b.oncebeforethecontanctetchandafterthecompletionofthewaferprocessflow.c.onceafterthefirstionimplantandafterthecompletionofthewaferprocessflow.d.onceatwafer/testsortandafterdieseparation.10.Thepurposeofth
7、econtanctformationprocessisto（）a.insulateallexposedsiliconareasofthewafer.b.formmetalcontactsonallactiveareasofthesilicon.c.createbarriersforchargecarriersbetweentransistors.d.formmetalcontactsonallexposedareasofsilicondioxide.11.Whatarethereasonsfort
8、hethermalannealprocessafterionimplantation?（）a.Annealingensuresthatthesiliconisreadytobondwiththeimplantedtungsten.b.AnnealingthewaferafterimplantpreparesthesiliconfortheSTIetchprocessc.Annealdrivesdopantsfurtherintothesiliconandrecrystalizest
