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1、ARTICLEINPRESSCARBONxxx(2009)xxx–xxxavailableatwww.sciencedirect.comjournalhomepage:www.elsevier.com/locate/carbonIonirradiationanddefectformationinsinglelayergraphenea,*bb,cbGiuseppeCompagnini,FilippoGiannazzo,SushantSonde,VitoRaineri,b,dEmanueleRiminiaDepa
2、rtmentofChemistry,UniversityofCatania,VialeA.Doria6,Catania95123,ItalybCNR-IMM,StradaVIII,5,Catania95121,ItalycScuolaSuperiorediCatania,ViaSanNullo,5/I,Catania95123,ItalydDepartmentofPhysicsandAstronomy,UniversityofCatania,ViaS.So?a64,Catania95123,ItalyARTIC
3、LEINFOABSTRACT+Articlehistory:Ionirradiationby500keVCionshasbeenusedtointroducedefectsintographenesheetsReceived18June2009depositedonSiO2inacontrolledway.ThecombineduseofRamanspectroscopyandAccepted10July2009atomicforcemicroscopy(AFM)allowedonetoclarifytheme
4、chanismsofdisorderforma-tioninsinglelayers,bilayersandmulti-layersofgraphene.TheratiobetweentheDandGpeakintensitiesintheRamanspectraofsinglelayersishigherthanforbilayersandmulti-layers,indicatingahigheramountofdisorder.Thiscannotbeonlyascribedtopoint+defects
5、,originatingfromdirectCCcollisions,butalsothedifferentinteractionsofsinglelayersandfewlayerswiththesubstrateplaysacrucialrole.AsdemonstratedbyAFM,for132irradiationat?uenceshigherthan5·10cm,themorphologyofsinglelayersbecomesfullyconformedtothatoftheSiO2subst
6、rate,i.e.grapheneripplesarecompletelysup-pressed,whileripplesarestillpresentonbilayerandmulti-layers.Thestrongerinteractionofasinglelayerwiththesubstrateroughnessleadstotheobservedlargeramountofdisorder.ó2009ElsevierLtd.Allrightsreserved.1.Introductionfectst
7、heelectronictransportpropertiesofgraphenedevices[2].Aboveandbeyond,thecontrolledintroductionofdefectsCarbonnanomaterialsarebecomingdaybydaymuchmoreingraphenecanbeusedtotailorphysical,chemicalandimportantforbasicscienceandappliedtechnology.Itispos-mechanicalp
8、roperties[4].sibletoobtaininacontrolledwaystructuressuchaswires,Recently,theeffectsofelectronbeamirradiation[5]andtubesandsheetsofarbitraryformandnearlyarbitraryplasmatreatments[6]onthecrystalli
