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1、第38卷第2期中國(guó)激光Vol.38,No.22011年2月CHINESEJOURNALOFLASERSFebruary,2011新型窄脈沖半導(dǎo)體激光器驅(qū)動(dòng)電源的研制1,21,21,21,2楊燕俞敦和吳姚芳侯霞1中國(guó)科學(xué)院上海光學(xué)精密機(jī)械研究所,上海2018002上海市全固態(tài)激光器與應(yīng)用技術(shù)重點(diǎn)實(shí)驗(yàn)室,上海201800摘要研制了一種新型窄脈沖半導(dǎo)體激光器的驅(qū)動(dòng)電源,包括驅(qū)動(dòng)電路和溫控電路兩部分。驅(qū)動(dòng)電路采用高速金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管(MOSFET)作開關(guān),為激光器提供一個(gè)重復(fù)頻率高(0
2、~50kHz)、前沿快(2.2~4.9ns)、脈寬窄(4.6~12.1ns)、脈沖峰值電流大(0~72.2A)的脈沖信號(hào),且輸出的激光脈沖波形平滑。對(duì)不同的激光器,改變電路中電源電壓、電阻、電容參數(shù),可獲得不同的重復(fù)頻率、前沿、脈沖寬度、脈沖峰值電流。溫控電路采用高精度的比例積分微分(PID)溫控,保證了激光器輸出功率和中心波長(zhǎng)的穩(wěn)定。此激光器驅(qū)動(dòng)電源不僅可作為一般高速、窄脈沖半導(dǎo)體激光器的驅(qū)動(dòng)電源,也是大能量、窄脈寬的半導(dǎo)體激光器種子光源的理想驅(qū)動(dòng)電源。關(guān)鍵詞半導(dǎo)體激光器;窄脈沖;高速金屬氧化物半導(dǎo)體場(chǎng)效
3、應(yīng)晶體管;溫度控制中圖分類號(hào)TN86;TN248.4文獻(xiàn)標(biāo)識(shí)碼Adoi:10.3788/CJL201138.0202003DesignofaNovelDrivePowerforNarrowPulseLaserDiode1,21,21,21,2YangYanYuDunheWuYaofangHouXia1ShanghaiInstituteofOpticsandFineMechanics,ChineseAcademyofSciences,Shanghai201800,China2Shangha
4、iKeyLaboratoryofAllSolidStateLaserandAppliedTechniques,Shanghai201800,ChinaAbstractAnoveldrivepowerfornarrowpulselaserdiode,whichiscomposedofdrivingcircuitandtemperaturecontrollingcircuit,hasbeendesigned.Highspeedmetaloxidesemiconductorfieldeffecttransi
5、stor(MOSFET)isappliedinthedrivingcircuitastheswitchtoprovidethelaserdiodewithsmoothpulseofhighrepetitionrate(0~50kHz),fastrisetime(2.2~4.9ns),narrowpulsewidth(4.6~12.1ns)andhighpeakpulsecurrent(0~72.2A).Accordingtotherequirementsofvarietyoflaserdiodes,diffe
6、rentrepetitionrates,risetime,pulsewidthsandpeakpulsecurrentscanbeachievedbyvaryingthevoltage,resistor,capacitorinthecircuit.Apreciseproportionalintegraldifferential(PID)temperaturecontrollingmoduleisadoptedinthecircuittoensurethestabilityoftheoutputpoweran
7、dthecentralwavelengthofthelaserdiode.Thedrivepowercanbenotonlyusedasthepowersupplyforthetraditionalhighspeed,narrowpulsewidthlaserdiode,butalsoanidealdrivepowerforthehighenergy,narrowwidthpulselaserdiode.Keywordslaserdiode;narrowpulse;highspeedmetaloxide
8、semiconductorfieldeffecttransistor;temperaturecontrollingOCIScodes140.2010;140.2020;140.3538;140.34801引言形一定要平滑,激光輸出的功率和中心波長(zhǎng)一定要隨著半導(dǎo)體激光器的發(fā)展,重復(fù)頻率高、前沿穩(wěn)定?？?、脈寬窄、峰值功率高的半導(dǎo)體激光器在工業(yè)、軍國(guó)內(nèi)現(xiàn)有的采用金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體
