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《SBT類鈣鈦礦結(jié)構(gòu)鐵電陶瓷制備與Cu單晶襯底上薄膜沉積探索》由會員上傳分享，免費(fèi)在線閱讀，更多相關(guān)內(nèi)容在學(xué)術(shù)論文-天天文庫。
1、SBT類鈣鈦礦結(jié)構(gòu)鐵電陶瓷制各與Cu單品襯底上薄膜沉積探索關(guān)鍵詞：類鈣鈦礦鐵電濺射靶材SBT鐵電薄膜cu單晶襯底射頻磁控濺射法青島科技人學(xué)研究生學(xué)位論文PREPARATIONOFSBTPEROVSKITE．LIKECERAMICSANDFERROELECTRICTHINFILMSDEPOSITIONONCuⅥ／AFERSABSTRACTRecently，ferroelectricthinfilmsaswellastheirapplicationsinnon—volatileferroelectricrandomaccessmemory(FRAM)arebecom
2、ingresearchhotpoint．However,ferroelectricfatiguehasbeenthemainfactorpreventingthefurtherdevelopmentandwidelyapplicationsofFRAM．Inordertosolvetheproblem，novelmaterialandwafer,suchasfatigue．freeperovskite—likeSrBi2Ta209(SBT)ferroelectricfilmandcoppersinglecrystalwaferareintroduced．Thep
3、reparationofsputteringtargetsanddepositionwafers，aswellasthepreparationofferroelectricthinfilmsarecomprehensivelyexploredinthispaper．SBTceramicsandsputteringtargetswithdifferentBi203additionsaresynthesizedbysolidstatereaction．TheeffectsofsynthesistechniqueandBi203additiononthestructu
4、reandpropertiesofSBTperovskite—likeceramicsareinvestigated．Withas-preparedSBTtargets，SBTfilmsaredepositedoncoppersinglecrystalwafersbyradiofrequencymagnetronsputtering(RMP)．Subsequently,thedepositedSBTfilmsareannealedatdifferenttemperaturesatpurenitrogen．ThestructureandpropertiesofSB
5、Tthinfilmsareinvestigated．TheexperimentalresultsindicatethattheoptimalquenchedtemperaturesforBiTa04precursorsandSBTpowdersare900℃and950℃．respectivelyinatwo-stageprocessofSBTsynthesis．AfterI000*Csinteringatypicalperovskite·likestructureSBTcanbeidentified．Thedensityofperovskite—likeSBT
6、ceramics，aswellasthedegreeofc·axispreferredorientationandgrainsizewillbeincreasedobviouslywhenraisingthesinteringtemperature．Furthermore，theferroelectricityincreaseswhilethedielectricitydecreasesasthesinteringtemperaturehigher．TheBi203additionalsoinfluencesthemicrostructure，andincrea
7、sesboththedegreeofC-axispreferredSBT類鈣鈦礦結(jié)構(gòu)鐵電陶瓷制備與Cu單品襯底上薄膜沉積探索orientationandgrainsizeofas．resultSBT．ThedielectricityandferroelectricityalsovaryaccompanyingwiththeBi203addition．AnoptimalferroelectricityCanbeobtainedwhentheBi203additionis5m01％．Theperovskite—likeSBTceramictargetswithdif
8、ferentBi203a
