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《氧化鎵籽晶層的制備與其對外延生長氧化鎵薄膜的影響》由會員上傳分享，免費(fèi)在線閱讀，更多相關(guān)內(nèi)容在學(xué)術(shù)論文-天天文庫。
1、氧化鎵籽晶層的制備及其對外延生長氧化鎵薄膜的影響PreparationofGa203seedlayeranditsinfluenceontheepitaxialgrowthofGa203filmsAbstractWiththerapiddevelopmentofoptoelectronicsemiconductortechnology,moreandmorepeoplegetinfavorofthebroadbandgapsemiconductormaterials．Galliumoxide(Ga203)isakindo
2、fbroadbandgapsemiconductormaterialofIII—VIgroups．Thep-Ga203isthemoststabletypeinthesefiveisomers．ThedirectbandgapofGa203iswide(4．2eV-4．9eV)，andithasgoodchemicalstabilityandthermalstability,SOithasbroadapplicationprospects，suchasthedeepultraviolettransparentconduc
3、tivefilm，ultravioletdetectors，thinfilmelectroluminescentdevices，gassensor,andfieldeffecttransistor．Inthispaper,Ga203seedlayerwasfabricatedonsapphiresubstrates(A1203)byRFmagnetronsputteringtechnology,andthesapphiresubstratewiththeseedlayerwasannealedtreatment．．The
4、nGa203filmswerefabricatedonsapphiresubstrateswithseedlayerandwithoutseedlayerbyMOCVDtechnology．1．Ga203filmswerefabricatedonsapphiresubstratesbylow-pressureMOCVDtechnology．ThecrystalandopticalqualityofGa203thinfilmswasinvestigatedbyX-raydiffractionandopticaltransm
5、ittancespectra．TheGa203filmisamorphousthatgrowndirectlyonthesapphiresubstrateandthetransmittanceandtheopticalbandgapwidthoftheGa203filmsareverysmall．Theexperimentshowsthat，thecrystalqualityandtheopticalpropertiesoftheGa203filmsarenotidealwhentheGa203filmswerefabr
6、icateddirectlyonsapphiresubstratesbyusinglow—pressureMOCVDtechnology．2．Inordertosolvetheaboveproblem，Ga203seedlayerwasfabricatedonthesapphiresubstratebyRFmagnetronsputtering，thenthe13-Ga203filmswerefabricatedonsapphiresubstrateswiththeseedlayerbylow-pressureMOCVD
7、technology．Theexperimentshowsthat，RelativetotheGa203filmsfabricateddirectlyonsapphiresubstrates，thecrystalqualityandtheopticalpropertiesoftheGa203filmsfabricatedonsapphiresubstrateswithGa203seedlayerhaveimproved，butnotevidently．3．TheGa203seedlayerwasannealedatahi
8、ghtemperature，thenthep-Ga203filmswerefabricatedonsapphiresubstrateswiththeannealedseedlayerbylow-pressureMOCVDtechnology．TheXRDshowsthat，theGa203filmshavetheob
