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1、st21CenturyProductAnalysisChemicalUnlayering-113ChemicalandMechanicalDeprocessing..................................................213.1WetChemicalEtching..........................................................................213.1.1SiliconEtchChemistry..............
2、.....................................................213.1.2DielectricRemoval.........................................................................313.1.3DecorationEtches/Stains................................................................513.1.4MetalInterconnecta
3、ndPolysiliconEtches......................................613.1.5GalliumArsenideEtchChemistry..................................................713.2ReactiveIonEtches..............................................................................713.2.1Nitride.............
4、.................................................................................1013.2.2SiliconDioxideEtches.................................................................1013.2.1MetalEtches............................................................................
5、.....1113.3ParallelLapping.................................................................................1113.4DieBacksidePolishing......................................................................1213.5References..................................................
6、.......................................13?2002,Semitracks,Inc.stChemicalUnlayering-1321CenturyProductAnalysis13ChemicalandMechanicalDeprocessingOnceafailuresitehasbeenlocalizedtoaparticularx-ylocation,itisoftennecessarytoexposethedefecttoexamineitmoreclosely.Thisisacco
7、mplishedthrougheitherchemicaldeprocessing,mechanicaldeprocessing,oracombinationofboth.Chemicaldeprocessingisbothanartandascience,whichrequiresbothknowledgeofthepartbeinganalyzedandsomebasicchemistryproperties.Theentireprinciplebehindchemicaldeprocessingistouncovertheph
8、ysicalmechanismcausingthedevicetofailallowingfordocumentationandfailuredetermination.Ifcareisnottaken,thephysicalevid
