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1、萬方數(shù)據(jù)第9卷第3期2011年5月納米技術(shù)與精密工程NanoteclmologyandPrecisionEngineeringV01．9No．3Mav2011Si02層上沉積的納米多晶硅薄膜及其特性趙曉鋒1’2，溫殿忠1”，王天琦1’2，丁玉潔2(1．黑龍江大學黑龍江省普通高等學校電子工程重點實驗室，哈爾濱150080；2．黑龍江大學集成電路重點實驗室，哈爾濱150080)摘要：采用低壓化學氣相沉積(LPCVD)系統(tǒng)以高純Sill。為氣源，在P型10．16鋤<100>晶向單晶硅襯底Si02層上制備納米多晶硅薄膜，薄膜沉積溫度為620℃，沉積薄膜厚度分剮
2、為30nrs、63nm和98nnl．對不同薄膜厚度的納米多晶硅薄膜分別在700℃、800℃和900℃下進行高溫真空退火．通過x射線衍射(XRD)、Raman光譜、掃描電子顯微鏡(sEM)和原子力顯微鏡(AFM)對SiO：層上沉積的納米多晶硅薄膜進行特性測試和表征，隨著薄膜厚度的增加，沉積態(tài)薄膜結(jié)晶顯著增強，擇優(yōu)取向為晶向．通過HP4145B型半導體參數(shù)分析儀對沉積態(tài)摻硼納米多晶硅薄膜電阻，．y特性測試發(fā)現(xiàn)，隨著薄膜厚度的增加，薄膜電阻率減小，載流子遷移率增大．關鍵詞：納米多晶硅薄膜；低壓化學氣相沉積(LPCVD)；遷移率中圖分類號：TN307
3、文獻標志碼：A文章編號：1672-6030(2011)03-0256-04DepositionandCharacteristicsofNano-PolysiliconThinFilmsonSi02LayerZHAOXiao．fen91”，WENDian．zhon91”，WANGTian．qil”，DINGYu-jie2(1．KeyLaboratoryofElectronicsEngineeringofCollegeofHeilongiiangProvince，HeilongjiangUniversity，Harbin150080，China；2．Maj
4、orLaboratoriesofIntegratedCircuits，HeilongjiangUniversity，Harbin150080，China)Abstract：Withlowpressurechemicalvapordeposition(LPCVD)methodandhish—puritySill4asgassource，nano—polysiliconthinfilmswerefabricatedonSi02layerofp-type10．16cm<100>crystalsili—consubstrate．Thedepositiontem
5、peratureofnano—polysiliconthinfilmswas620℃andthedepositionthicknessesofthethinfilmswere30am，63nmand98nmrespectively．Thenano—polysiliconthinfilmswithdifferentthicknesseswereannealedinvacuumathightemperaturesof700℃．800℃and900℃respectively．Thenano—polysiliconthinfilmsdepositedonSi0
6、2layerweretestedandcharacterizedbyX—raydiffraction(XRD)，Ramanspectroscopy，fieldemissionscanningelectronmicroscopy(SEM)andatomicforcemicroscope(AFM)，andresultsindicatethatwiththeincreaseofthedepositedthinfilmsthickness，crystallizationofthethinfilmsissignificantlyenhancedandtheexc
7、ellentorientationis<111>．The／-Vcharacteristicsofthedepositednano-polysiliconthinfilmswithBdopingweremeas—uredbyHP4145Btypesemiconductorparameteranalysisdevice，whichverifiesthatconductivityofthethinfilmsdecreasesandmobilityofthecarriersincreaseswiththeincreaseofthinfilmthickness．
8、Keywords：nano—polysfliconthinfi]ms；lowpressurec
