實(shí)驗(yàn)報(bào)告-磁聚焦法測(cè)定電子荷質(zhì)比

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1、大學(xué)物理實(shí)驗(yàn)報(bào)告實(shí)驗(yàn)報(bào)告姓名：班級(jí)：學(xué)號(hào)：實(shí)驗(yàn)成績(jī)：同組姓名：實(shí)驗(yàn)日期：2008/03/31指導(dǎo)老師：批閱日期：---------------------------------------------------------------------------------------------------------------------------------磁聚焦法測(cè)定電子荷質(zhì)比【實(shí)驗(yàn)?zāi)康摹?、學(xué)習(xí)測(cè)量電子荷質(zhì)比的方法。2、了解帶點(diǎn)粒子在電磁場(chǎng)中的運(yùn)動(dòng)規(guī)律及磁聚焦原理?！緦?shí)驗(yàn)原理】1、電子

2、在磁場(chǎng)中運(yùn)動(dòng)的基本參數(shù)2、零電場(chǎng)法測(cè)定電子荷質(zhì)比=n2*10143、電場(chǎng)偏轉(zhuǎn)法測(cè)定電子荷質(zhì)比上海交通大學(xué)5/5大學(xué)物理實(shí)驗(yàn)報(bào)告=【實(shí)驗(yàn)數(shù)據(jù)記錄、結(jié)果計(jì)算】l數(shù)據(jù)記錄系數(shù)：*108π/4π/2ΠC10.0818750.32751.31C20.06250.251.00K1==3.789*107電子荷質(zhì)比理論值：X0==1.758*1011c/kg實(shí)驗(yàn)數(shù)據(jù)：850V950V0.4200.4120.4240.4150.4250.4130.4520.4560.4510.4580.4610.4560.4180.

3、4100.4180.4030.4120.4100.4510.4540.4480.4570.4620.4500.8540.8530.8480.8550.8670.8550.9010.8950.9000.8970.9000.8970.8510.8550.8460.8550.8680.8550.9010.8940.9010.8990.8950.8971.2961.2911.2801.2881.2971.2841.3371.3491.3441.3461.3561.3441.2971.2901.2801.28

4、61.2961.2821.3381.3511.3431.3461.3561.344X偏轉(zhuǎn)板上加交流偏轉(zhuǎn)電壓：π/4π/2Π/V850950850950850950I/A0.1880.1930.3750.4000.7470.780Y偏轉(zhuǎn)板上加交流偏轉(zhuǎn)電壓：π/4π/2Π/V850950850950850950I/A0.1400.1500.2840.3070.5930.602上海交通大學(xué)5/5大學(xué)物理實(shí)驗(yàn)報(bào)告l數(shù)據(jù)處理與結(jié)果比較零電場(chǎng)法測(cè)量電子荷質(zhì)比：850V平均值/A勵(lì)磁電流/A平均勵(lì)磁電流/A0.4

5、200.4120.4240.4150.4250.4130.4180.415=0.4270.4180.4100.4180.4030.4120.4100.4110.8540.8530.8480.8550.8670.8550.8550.8550.8510.8550.8460.8550.8680.8550.8551.2961.2911.2801.2881.2971.2841.2891.2891.2971.2901.2801.2861.2961.2821.288X1=k=1.766*1011c/kg與理論值的

6、相對(duì)誤差=0.455%850V平均值/A勵(lì)磁電流/A平均勵(lì)磁電流/A0.4520.4560.4510.4580.4610.4560.4560.455=0.4500.4510.4540.4480.4570.4620.4500.4540.9010.8950.9000.8970.9000.8970.8980.8980.9010.8940.9010.8990.8950.8970.8981.3371.3491.3441.3461.3561.3441.3461.3461.3381.3511.3431.3461.

7、3561.3441.346X2=k=1.778*1011c/kg與理論值的相對(duì)誤差=1.14%電場(chǎng)偏轉(zhuǎn)法測(cè)定電子荷質(zhì)比：X偏轉(zhuǎn)板上加交流偏轉(zhuǎn)電壓：上海交通大學(xué)5/5大學(xué)物理實(shí)驗(yàn)報(bào)告/VI/A（）（c/kg）（）（c/kg）π/48500.1881.969*10111.503*10119500.1932.088*10111.594*1011π/28500.3751.980*10111.511*10119500.4001.944*10111.484*1011π8500.7471.995*10111.52

8、3*10119500.7802.046*10111.561*1011l結(jié)果分析用零電場(chǎng)法測(cè)出的電子荷質(zhì)比和理論值分別相差了0.455%與1.14%。尤其是850V情況下的結(jié)果，準(zhǔn)確度較高。用電場(chǎng)偏轉(zhuǎn)法測(cè)電子荷質(zhì)比時(shí)，在X偏轉(zhuǎn)板上加交流偏轉(zhuǎn)電壓后，發(fā)現(xiàn)（）相對(duì)理論值普遍偏大，（）相對(duì)理論值普遍偏大。且二者偏離的大小差不多。現(xiàn)對(duì)螺旋線的起點(diǎn)位置進(jìn)行大致估計(jì)：由計(jì)算公式，得=*0.107=0.114m=*0.123=0.114m由此可見(jiàn)，螺旋線的起點(diǎn)位置大約在0.114m附