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1、SOPASSEMBLYPROCESSFLOW&QUALITYCONTROLINSTRUCTIONContentsPackageInstructionProcessFlowQualityControlPackageInstructionSOPSSOP3.TSSOP4.MFPASEASEPackageInstructionASYprocessflowWaferSawDieAttachWireBondWaferMountWaferGrindingEpoxyCureMoldingPostMoldCureP
2、latingTrim/FormPacking&ShippingDe-junkLaserMarking前段制程后段制程WaferDie(chip)DieonLeadframeEpoxyLeadFrameBeforeAfterLaserMarkingLaserMarkingLaserMarkingLaserMarkingWaferGrindingLOADUNLOADGRINGINGPurpose:GrindingthewafertoCustomerrequiredthicknessWaferGrind
3、ing晶圓(未研磨)研磨機晶圓(研磨後)晶元背面WaferbacksideFrameMountTapePurpose:CombinethewaferwithDicingtapeontotheframefordiesawingWafermountMachineWaferMountFramePurpose:ToseparatediesfromeachotherfordieattachMonitorLoad/UnloadSawingCleaningMachineWaferSawBeforewafersa
4、w:Afterwafersaw:WaferSawPurpose:AttachthedieswithepoxyonsubstrateforthefollowingprocessDieAttachOutputDiebondSubstrateloadbondWorkingflow:DieAttachRobbertipLead-frameEpoxyPurpose:SolidifytheepoxyafterD/AInsideOvenEpoxyCurePurpose:Connectingthechipandt
5、heexteriorcircuitinputinputoutputBondlocationTheory:Useultrasonic,thermal,forcetoformtheintermetallicbetweengoldenwireandjointmetal(Al,Au,Ag…)WireBondGoldwireleadDieAlpadCapillaryMoldMachineMoldingPurpose:SealtheproductwithEMCtopreventdie,goldwirefrom
6、beingdamaged,contaminatedandoxygenic.MoldingMoldingTopchaseAirventBottomchaseCavityLeadframePlungerPotGateinsertRunnerCompoundBottomcullblockTopcullblockMoldingMoldingTopchaseAirventBottomchaseCavityLeadframePotGateinsertRunnerCompoundBottomcullblockT
7、opcullblockPlungerMoldingMoldingTopchaseAirventBottomchaseCavityLeadframePotGateinsertRunnerCompoundBottomcullblockTopcullblockPlungerMoldingAfterMoldMoldingTopchaseAirventBottomchaseCavityLeadframePotGateinsertRunnerCompoundBottomcullblockTopcullbloc
8、kPlungerEpoxyLeadFramePurpose：UselaserlightirradiatedbyCO2orYAGtovapourtheEMCtoshowcontentonthepackage，suchasdate,schedule,placeofproductionandsoon.LaserMarkinglaserEMCvapouredBeforeAfterLasermarkingOvenInsidePurpose:ToletEMCreactcompletelysot
