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1、第47卷第3期南開大學學報(自然科學版)V01.47NO_32014年6月AetaScientiarumNaturaliumUniversitatisNankaiensisJun.2014ArticleID:0465—7942(2014)03—0074—07APowerandAreaEfficientTemporallyHardenedbyDesignLatchXuJiangta0,YangYuhong,LiXinwei,LiYuanqing(sfh0olofElectronicInformationEngine
2、ering,TianjinUniversity,Tianjin300072,China)Abstract:Atemporallyhardenedlatchforsingleeventupset(SEU)toleranceispresented.Theproposed—latchisconstructedbyaddingthreeSETtolerantdelayelementsinaconventionallatch.Itisimmunetosingleeventtransient(SET)pulseswhosew
3、idthislessthanAT,whereATisthelongestanticipateddurationofSET.Comparedwithapreviousstructure,thepowerandareaarereducedby38%and20%respectively.Simu—lationresultsdemonstratetheeffectivenessofthistemporalhardeningapproach.Keywords:latch;radiationhardeningbydesign
4、(RHBD);singleeventupset(SEU);singleeventtransient(SET)CLCnumber:TN432Documentcode:A0IntroductionRadiation—inducedsingle—eventerrorsareincreasinglycriticalconcernforintegratedcircuits一.Fordigitallogiccircuits,singleeventupsets(SEUs)andsingleeventtransients(SET
5、s)arethemajorsourcesofsofterrors[.Radiationhardeningbydesign(RHBD)promisestoallowhardenedcircuitstobefabricatedoncommerciallyavailablestate—of—the—artCMOSmanufacturingprocesses[.Therehavebeenmanydesignapproachestomitigatesofterrors,suchasspatialhardeningtechn
6、iques,temporalhardeningtechniquesandcapacitivehardeningtechniques[一.Thepenaltyofthesetechniquesinvolvesmorepowerconsumption.areaoverheadorreductionincircuitperformance[.Sequentialcircuitele—mentslikelatchesandflip—flopsarecommonlyusedinradiation—hardenedcircu
7、it,andtheirradiationtol—eranceiscriticalforspaceapplications.Severallatchstructuresforsingleeventeffects(SEEs)tolerancehavebeenpreviouslyreported.Dualinterlockedstoragecell(DICE)larchesorderivativesofthisapproachcanmitigateSEUs,buttheyarepronetoupsetduetoSETo
8、ntheinputswhenthestoragelatchesareclockedfromatransparenttoastoragestate[.Triplemodularredundancy(TMR)isamodularredundancytechniquetomitigateSEU_14一引.ThemaindrawbacksofapplyingTMRarethree