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1、第27卷第10期傳感技術(shù)學(xué)報(bào)Vol?27No?102014年10月CHINESEJOURNALOFSENSORSANDACTUATORSOct.2014DesignandImplementationofLowPowerRFFrontEndAppliedinIntelligentSensor?TIANXiaoming?BAIChunfeng?WUJianhui(NationalASICsystemengineeringresearchcenter?SoutheastUniversity?Nanjing210096?China)Abstract:AlowpowerRFfrontend?which
2、includeslownoiseamplifier(LNA)anddownmixer?isemployedinanintelligentsensor.ThewirelesscommunicationsofintelligentsensorsarebasedonZigbeeprotocol?andaZigbeere ̄ceivergenerallyuseslowIFarchitechturetoobtainagoodtrade ̄offbetweenhighsensivityandlowpower.ProposedLNAadoptsacommongate(CG)noisecancelationst
3、ructureandemploys‘gboost’techniquetoachievealowmnoisefigure(NF)foralowpowerconsumptionandasimplifiedimpedancematchingnet.Passivearchitechtureisemployedinthedesignofdownmixerwithboththeinputtransconductancestageandtheoutputtransimpedancestagereducingpowerconsumptionbyemploying‘gboost’technique.Besid
4、es?passivemixingswitchconsumesnomquiescentcurrent?whichalsocontributetothelowpowerdesign.ThedesignisimplementedinTSMC0.13μm2CMOSRFtechnologywiththecircuitconsuming0.12mmactiveareaand5.4mWpoweratthesupplyof1.2V.SimulationresultsrevealthatLNAachievesaperformanceof2.1dBNFandSbelow-30dB?aswellasthemixe
5、r11obtains27.7dBconversiongain.What’smore?5.4dBNFand5.5dBmIIP3ismeasuredinthetestofRFfrontend?whichiscompetentforintelligentsensorapplications.Keywords:intelligentsensor?lowpowerRFfrontend?noisecancellation?gboost?passivemixermEEACC:6270doi:10.3969/j.issn.1004-1699.2014.10.005一種智能傳感器射頻前端的低功耗設(shè)計(jì)與實(shí)現(xiàn)?田
6、曉明?白春風(fēng)?吳建輝(東南大學(xué)國(guó)家專(zhuān)用集成電路系統(tǒng)工程技術(shù)研究中心?南京210096)摘要:敘述了一種應(yīng)用于智能傳感器的低功耗射頻前端電路?包括低噪聲放大器和下混頻器?智能傳感器的無(wú)線通信一般基于Zigbee協(xié)議?Zigbee接收機(jī)一般采用低中頻的架構(gòu)以獲得靈敏度和低功耗之間較好的折中?主要研究了從提高晶體管跨導(dǎo)效率和提高電流利用效率兩個(gè)角度實(shí)現(xiàn)低功耗的方法?低噪聲放大器采用交叉耦合輸入的噪聲抵消結(jié)構(gòu)?增強(qiáng)了輸入管的等效跨導(dǎo)?因而在較低功耗代價(jià)下獲得了低噪聲系數(shù)并實(shí)現(xiàn)50Ω阻抗匹配?下混頻器采用基于電流放大器的無(wú)源混頻結(jié)構(gòu)?輸入跨導(dǎo)級(jí)通過(guò)電流復(fù)用提高了電流利用效率而輸出跨阻級(jí)引入跨導(dǎo)增強(qiáng)技術(shù)
7、減少了中頻電流的泄漏?這使得在同等功耗水平下可以獲得更高的線性度?即節(jié)省了功耗?討論了電路設(shè)計(jì)過(guò)程并在TSMC0.13μmCMOS射頻工藝下進(jìn)行流片驗(yàn)證?2在1.2V電壓下整個(gè)前端電路消耗5.4mW功耗和0.12mm芯片面積?仿真結(jié)果表明低噪聲放大器獲得了2.1dB的噪聲系數(shù)和小于-30dB的S?混頻器轉(zhuǎn)換增益為27.7dB?而芯片測(cè)試得到的前端噪聲系數(shù)為5.4dB?IIP3達(dá)到5.5dBm?能夠滿足智能11