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1、SiliconNanowiresSynthesizedviaMicrowave-AssistedChemical VaporDeposition組員：蔣振龍王美玲孫建會孫瑞瑞董思寧殷月偉第十七組主要內(nèi)容IntroductionExperimentExperimentalResultsDiscussionApplicationofSiNWsIntroductionofsiliconnanowiresSiliconnanowireshaveuniqueelectronicandopticalproperties,itcanbewildlyusedinsensorandelectr
2、onicindustries.Thesynthesisofsiliconnanowiresarehigh-costorhigh-energyconditions.合成硅納米線的幾種方法激光燒蝕：海綿狀的SiNWs水熱法：（20nm）分子束取向附生法(MBE）金屬催化化學腐蝕方法（單晶性好、軸向可控）AAO模板法熱物理蒸發(fā)法SiNWsbyLaserAblationTEMimageofas-grownSiNWsbythethermalphysicalevaporation,AnewmethodtosynthesissiliconnanowiresThisisnotanewmeth
3、od.Microwavesourceshavepreviouslybeenemployedinthesynthesisofcarbonnanotubes.However,tothebestofourknowledge,applicationofamicrowavefieldhasnotbeenreportedonthegrowthofSiNWsatambientconditionspriortothiswork.ExperimentconditionAnunmodified1100??W,2.45??GHzEmersondomesticmicrowaveovenTrichlo
4、rosilane(99%)fromAldrichSubstratematerials:（i）1×4??cmITO-coatedslidesfromHartfordGlassCo.(surfaceresistivity≈15Ω/□)thatwerethinneddownto1??mmthicknessbymechanicalpolishing(substrateA).（ii）1?mmthickITO-coatedglassslidesfromAldrich(surfaceresistivity≈15Ω/□)thatwerecutintorectanglesof1×4??cm(s
5、ubstrateB).ThedifferenceoftwosubstratesSubstrateA:SubstrateB:Experimentsubstratesdegreased（acetone）Rinse(2-propanol；deionizedwater)dryDipping（SnO2colloidalsolution）withdrawndrythermaltreatment(300℃，3h）microwavereactionvialirradiated(0.5min)testSchemeofdepositionScheme1.Schemeofdeposition.HS
6、iCl3(g)+ITO(S)+μwaveradiation→Si(ads)+ITO(S)+HCl(g)+Cl2(g)Results(SEM)Fig.1.SEMimagesofstructuresobtainedondifferentregionsonaconductivesubstrate,substrateA:(a–b)heatedsubstrate(withanaveragelengthof30andaveragediameterof3)(d–f)heatedsubstrate(averagelengthof30)(g--h)unheatedsubstrateResult
7、s(SEM)Fig.2.SEMimagesofSiNWs(30–45??nmdiameter)interspersedwithSicrystallites(0.3μmdiameter)depositedonconductiveITOsurface(substrateB).Thevariouspicturesaredifferentmagnificationsofthesameregionofthesubstrate.Results(SEM)Fig.3.SEMimagesofporousSi/agglom
