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1、三極管及場(chǎng)效應(yīng)管原理講解大綱:一三極管與場(chǎng)效應(yīng)管的簡(jiǎn)介二三極管與場(chǎng)效應(yīng)管的工作原理三三極管與場(chǎng)效應(yīng)管的區(qū)別四三極管與場(chǎng)效應(yīng)管的實(shí)際應(yīng)用一三極管與場(chǎng)效應(yīng)管的簡(jiǎn)介1.三機(jī)管的簡(jiǎn)介半導(dǎo)體三極管又稱晶體三極管,簡(jiǎn)稱晶體管.它是由三塊半導(dǎo)體組成,構(gòu)成兩個(gè)PN結(jié),即集電結(jié)和發(fā)射結(jié),基結(jié)3個(gè)電極,分別是集電極,基極,發(fā)射極,如下圖所示:CCBBEEB為基極,C為集電極,E為發(fā)射極半導(dǎo)體三極管TRANSISTORTest#Description1hFEForward-currenttransferratio2VBEBaseemittervoltage(seeal
2、soAppendixF)3IEBOEmittertobasecutoffcurrent4VCESATSaturationvoltage5ICBOCollectortobasecutoffcurrent6ICEOCollectortoemitercutoffcurrentICER,withbasetoemiterloadICEX,reversebias,orICESshort(seealsoAppendixF)7BVCEOBreakdownvoltage,collectortoemitter,BVCERwithbasetoemiterload,BV
3、CEXreversebias,orBVCESshort(seealsoAppendixF)8BVCBOBreakdownvoltage,collectortobase9BVEBOBreakdownvoltage,emittertobase10VBESATBaseemittersaturationvoltage2.場(chǎng)效應(yīng)管簡(jiǎn)介場(chǎng)效應(yīng)管又稱金屬-氧化物-半導(dǎo)體場(chǎng)效應(yīng)管,也就是我們通常所說MOS(MetalOxideSemiconductor)管.場(chǎng)效應(yīng)管是一種由輸入信號(hào)電壓來控制其輸出電流大小的半導(dǎo)體場(chǎng)效應(yīng)管,是電壓控制器件,輸入電阻非常高.場(chǎng)效應(yīng)管
4、分為:結(jié)型場(chǎng)效應(yīng)管(JFET)和絕緣柵型場(chǎng)效應(yīng)管(IGFET)兩大類.結(jié)型場(chǎng)效應(yīng)管JEFTTest#Description1VGSOFFGatetosourcecutoffvoltage.2lDssZerogatevoltagedraincurrent.3BVDGODraintogatebreakdownvoltage.4IGSSGatereversecurrent.5IDGODraintogateleakage.6IDOFFDraincut-offcurrent.7BVGSSGatetosourcebreakdownvoltage.8VDSON
5、Draintosourceon-statevoltage.結(jié)型場(chǎng)效應(yīng)管有N型和P型溝道兩種,電路符號(hào)如下dd結(jié)型場(chǎng)效應(yīng)管有三極:珊極gg源極N型sP型s漏極結(jié)型場(chǎng)效應(yīng)管有兩個(gè)PN結(jié),在柵源極上加一定電壓,在場(chǎng)效應(yīng)管內(nèi)部會(huì)形成一個(gè)導(dǎo)電溝道,當(dāng)d,s極間加上一定電壓時(shí),電流就可以從溝道中流過,即通過源電壓來改變導(dǎo)電溝道電阻,實(shí)現(xiàn)對(duì)漏極電流的控制.結(jié)型場(chǎng)效應(yīng)管的主要參數(shù)1.夾斷電壓UDS(off),當(dāng)UDS等于某一個(gè)定值(10v),使Id等于某一個(gè)微小電流(如50uA)時(shí),柵源極間所加的UGS即為夾斷電壓.UDS(off)一般為1~10V.2.飽和漏極
6、電流IDS:當(dāng)UGS=0時(shí),場(chǎng)效應(yīng)管發(fā)生預(yù)夾斷時(shí)的漏極電流.3.直流輸入電阻RGS.4.低頻跨導(dǎo)GM5.漏源擊穿電壓U(BR)DS6.柵源擊穿電壓U(BR)GS7.最大耗散功率PDM絕緣柵型場(chǎng)效應(yīng)管是由金屬氧化物和半導(dǎo)體組成,故稱為MOSFET,簡(jiǎn)稱MOS管,其工作原理類似於結(jié)型場(chǎng)效應(yīng)管絕緣柵場(chǎng)效應(yīng)管MOSFETTest#Description1VGSTHThresholdvoltag2IDssZerogatevoltagedraincurrent.lDSxwithgatetoSourcereversebias.3BVDssDraintoSour
7、cebreakdownvoltage.4VDSONDraintoSourceon-statevoltage.5IGSSFGatetoSourceleakagecurrentforward.6IGSSRGatetoSourceleakagecurrentreverse.7VFDiodeforwardvoltage.8VGSFGatetoSourcevoltage(forward)requiredforspecifiedInatspecifiedVos.(seeSISQAppendixF)9VGSRGatetoSourcevoltage(revers
8、e)requiredforspecifiedIDatspecifiedVDS.(seealsoAppendixF)10VDSONOn-s
