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1、第27卷第10期傳感技術(shù)學(xué)報(bào)V01.27No.10CHINESEJOURNALOFSENSORSANDACTUATORS0ct.20142014年10月DesignandImplementationofLowPowerRFFrontEndAppliedinIntelligentSensorTIANXiaoming,BAIChunfeng,Jianhui(NationalASICsystemengineeringresearchcenter,SoutheastUniversity,Nanfing210096,China)Abstract:AlowpowerRFfrontend,which
2、includeslownoiseamplifier(LNA)anddownmixer,isemployedinanintelligentsensor.ThewirelesscommunicationsofintelligentsensorsarebasedonZigbeeprotocol,andaZigbeere—ceivergenerallyuseslowIFarchitechturetoobtainagoodtrade—ofbetweenhighsensivityandlowpower.ProposedLNAadoptsacommongate(CG)noisecancelation
3、structureandemploys‘gboost’techniquetoachievealownoisefigure(NF)foralowpowerconsumptionandasimplifiedimpedancematchingnet.Passivearchitechtureisemployedinthedesignofdownmixerwithboththeinputtranseonduetancestageandtheoutputtransimpedancestagereducingpowerconsumptionbyemploying‘gboost’technique.B
4、esides,passivemixingswitchconsumesnOquiescentcurrent,whichalsocontributetothelowpowerdesign.ThedesignisimplementedinTSMC0.13txmCMOSRFtechnologywiththecircuitconsuming0.12mmactiveareaand5.4mWpoweratthesupplyof1.2V.SimulationresultsrevealthatLNAachievesaperformanceof2.1dBNFandS1Ibelow一30dB,aswella
5、sthemixerobtains27.7dBconversiongain.What’Smore.5.4dBNFand5.5dBmIIP3ismeasuredinthetestofRFfrontend,whichiscompetentforintelligentsensorapplications.Keywords:intelligentsensor;lowpowerRFfrontend;noisecancellation;gboost;passivemixerEEACC:6270doi:10.3969/j.issn.1004-1699.2014.10.005一種智能傳感器射頻前端的低功
6、耗設(shè)計(jì)與實(shí)現(xiàn)田曉明,白春風(fēng),吳建輝(東南大學(xué)國家專用集成電路系統(tǒng)工程技術(shù)研究中心,南京210096)摘要:敘述了一種應(yīng)用于智能傳感器的低功耗射頻前端電路,包括低噪聲放大器和下混頻器。智能傳感器的無線通信一般基于Zigbee協(xié)議,Zigbee接收機(jī)一般采用低中頻的架構(gòu)以獲得靈敏度和低功耗之間較好的折中。主要研究了從提高晶體管跨導(dǎo)效率和提高電流利用效率兩個(gè)角度實(shí)現(xiàn)低功耗的方法,低噪聲放大器采用交叉耦合輸入的噪聲抵消結(jié)構(gòu),增強(qiáng)了輸入管的等效跨導(dǎo),因而在較低功耗代價(jià)下獲得了低噪聲系數(shù)并實(shí)現(xiàn)5On阻抗匹配;下混頻器采用基于電流放大器的無源混頒結(jié)構(gòu),輸入跨導(dǎo)級(jí)通過電流復(fù)用提高了電流利用效率而輸出跨
7、阻級(jí)引入跨導(dǎo)增強(qiáng)技術(shù)減少了中頻電流的泄漏,這使得在同等功耗水平下可以獲得更高的線性度,即節(jié)省了功耗。討論了電路設(shè)計(jì)過程并在TSMC0.13txmCMOS射頻工藝下進(jìn)行流片驗(yàn)證,在1.2V電壓下整個(gè)前端電路消耗5.4mw功耗和0.12IBm芯片面積,仿真結(jié)果表明低噪聲放大器獲得了2.1dB的噪聲系數(shù)和小于一30rlB的s混頻器轉(zhuǎn)換增益為27.7dB;而芯片測(cè)試得到的前端噪聲系數(shù)為5.4dB,IIP3達(dá)到5.5dBm,能夠滿足智能傳感器無線通信的需