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1、ElectricaltransportandpersistentphotoconductivityinmonolayerMoS2phototransistorsAntonioDiBartolomeo1,2,*,LucaGenovese1,3,TobiasFoller3,FilippoGiubileo2,GiuseppeLuongo1,2,LucaCroin4,Shi-JunLiang5,L.K.Ang5,andMarikaSchleberger31DipartimentodiFisica“E.R.Caianiaello”,UniversitàdiSalerno,viaGiovann
2、iPaoloII,Fisciano,84084,Italy.2CNR-SPINSalerno,viaGiovanniPaoloII,Fisciano,84084,Italy3Fakult?tfürPhysikandCENIDE,Universit?tDuisburg-Essen,Lotharstrasse1,47057,Duisburg,Germany4INRIM-StradadelleCacce,91-10135Torino,Italy5EngineeringProductDevelopment(EPD),SingaporeUniversityofTechnologyandDes
3、ign(SUTD),8SomapahRoad,487372,Singapore*Correspondingauthor.E-mail:adibartolomeo@unisa.itKeywords:Two-dimensionalmaterials,molybdenumdisulfide(MoS2),phototransistor,persistentphotoconductivity,chargetrapping,photogating,spacechargelimitedconduction.AbstractWestudyelectricaltransportpropertiesi
4、nexfoliatedmolybdenumdisulfide(MoS2)back-gatedfieldeffecttransistorsatlowdrainbiasandunderdifferentilluminationintensities.Itisfoundthatphotoconductiveandphotogatingeffectaswellasspacechargelimitedconductioncansimultaneouslyoccur.Wepointoutthatthephotoconductivityincreaseslogarithmicallywithth
5、elightintensityandcanpersistwithadecaytimelongerthan104s,duetophoto-chargetrappingattheMoS2/SiO2interfaceandinMoS2defects.Thetransfercharacteristicspresenthysteresisthatisenhancedbyillumination.Atlowdrainbias,thedevicesfeaturelowcontactresistanceof1.4?Ω/??,ONcurrentashighas1.25??/??,105ON-OFFr
6、atio,mobilityof~1??2/??andphotoresponsivity?≈1??.IntroductionMolybdenumdisulfide(MoS2)fieldeffecttransistors(FETs)haverecentlybecomeverypopularasalternativestographenedevicesforanewgenerationoftransistorsbasedonatomically-thin2Dmaterials[1-4].Indeed,monolayerMoS2hasadirectbandgapof~1.8?1.9??[5
7、],whichenablesthefabricationoftransistorswithON/OFFratioexceeding108[6-7],thatissuitableforlogicapplicationsandnon-achievablewithgaplessgraphene.Unfortunately,thesuccessofMoS2basedtransistorshasbeenhinderedsofarbythelowmobility,whichisi
