2008 Raman spectroscopy and imaging of graphene英文學(xué)習(xí)材料

2008 Raman spectroscopy and imaging of graphene英文學(xué)習(xí)材料

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1、NanoRes(2008)1:273291DOI10.1007/s12274-008-8036-100273ReviewArticleRamanSpectroscopyandImagingofGrapheneZhenhuaNi,YingyingWang,TingYu,andZexiangShen()DivisionofPhysicsandAppliedPhysics,SchoolofPhysicalandMathematicalSciences,NanyangTechnologicalUniversity,Singapore637

2、371,SingaporeReceived:17July2008/Revised:27August2008/Accepted:28August2008?TsinghuaPressandSpringer-Verlag2008.ThisarticleispublishedwithopenaccessatSpringerlink.comABSTRACTGraphenehasmanyuniquepropertiesthatmakeitanidealmaterialforfundamentalstudiesaswellasforpotent

3、ialapplications.HerewereviewrecentresultsontheRamanspectroscopyandimagingofgraphene.WeshowthatRamanspectroscopyandimagingcanbeusedasaquickandunambiguousmethodtodeterminethenumberofgraphenelayers.ThestrongRamansignalofsinglelayergraphenecomparedtographiteisexplainedbya

4、ninterferenceenhancementmodel.Wehavealsostudiedtheeffectofsubstrates,thetoplayerdeposition,theannealingprocess,aswellasfolding(stackingorder)onthephysicalandelectronicpropertiesofgraphene.Finally,RamanspectroscopyofepitaxialgraphenegrownonaSiCsubstrateispresentedandst

5、rongcompressivestrainonepitaxialgrapheneisobserved.Theresultspresentedherearehighlyrelevanttotheapplicationofgrapheneinnano-electronicdevicesandhelpindevelopingabetterunderstandingofthephysicalandelectronicpropertiesofgraphene.KEYWORDSGraphene,Ramanspectroscopyandimag

6、ing,substrateeffect,deviceapplicationIntroductionbehavelikemasslessDiracFermions[1].TheuniquepropertiesofgraphenemakeitapromisingcandidateGraphenecomprisesonemonolayerofcarbonatomsforfundamentalstudyaswellasforpotentialdevicepackedintoatwo-dimensional(2D)honeycombappl

7、ications[38].Thechargecarriersingraphenelattice[1].Ithasattractedmuchinterestsinceitwascanbetunedcontinuouslybetweenelectronsandfirstdiscoveredin2004[2].Grapheneisthebasic132holesinconcentrationsnashighas10/cm.Thebuildingblockforothercarbonnanomaterials,suchmobilityof

8、grapheneatroomtemperatureis~120000as0Dfullerenes,1Dcarbonnanotubes,and2Dcm2/(V·s),higherthananyknownsemiconductornanographit

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